학술논문
Study of electrical properties of poly-3-alkylthiophen (P3AT) derivatives P3HT, P3BT and P3DDT based field effect transistors
Document Type
Conference
Source
2013 Annual IEEE India Conference (INDICON) India Conference (INDICON), 2013 Annual IEEE. :1-4 Dec, 2013
Subject
Language
ISSN
2325-940X
2325-9418
2325-9418
Abstract
Top contact organic thin-film field effect transistors based on regioregular poly(3-butylthiophene-2,5-diyl) (P3BT), poly(3-dodecylthiophene-2,5-diyl) (P3DDT) and poly(3-hexylthiophene-2,5-diyl) (P3HT) of similar concentration were fabricated by spin coating technique. The current-voltage (I-V) characteristics of these three different polymer based organic field-effect transistors (OFETs) were studied. The device performance parameters for each kind of OFET were estimated with the help of measured electrical characteristics and performance were compared to optimize the best polymer for FETs amongst these three polymers.