학술논문

TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors
Document Type
Periodical
Source
Journal of Lightwave Technology J. Lightwave Technol. Lightwave Technology, Journal of. 42(9):3269-3276 May, 2024
Subject
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
Germanium
Silicon
Doping
C-band
Geometry
Substrates
Solid modeling
FDTD
multiphysics simulation
silicon photonics
waveguide photodetectors
VPIN
Language
ISSN
0733-8724
1558-2213
Abstract
We discuss the characterization and numerical simulation of vertical Ge-on-Si waveguide photodetectors (VPIN WPDs) of the Cisco platform for data communications in the O-band ($1.31 \,\mu \mathrm{m}$), with the goal of optimizing their frequency response while integrating them into low-power systems. In a large set of WPDs belonging to 6 different structural variants, at a standard bias voltage of $-2 \,\mathrm{V}$ the best specimens exhibit an intrinsic electro-optic bandwidth of more than $40 \,\mathrm{G}\mathrm{Hz}$, which is reduced to about $10 \,\mathrm{G}\mathrm{Hz}$ at zero bias. A comprehensive 3D multiphysics model, validated through the characterization campaign, provides design guidelines towards intrinsic bandwidths not only wider than $60 \,\mathrm{G}\mathrm{Hz}$ at $-2 \,\mathrm{V}$, directly suitable for application in 200 Gbit/s systems, but also wider than $40 \,\mathrm{G}\mathrm{Hz}$ at zero bias, not including the possible recourse to extrinsic parameter engineering.