학술논문

Different approximations for carriers lifetimes in HgCdTe quasi-neutral regions
Document Type
Conference
Source
2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Numerical Simulation of Optoelectronic Devices (NUSOD), 2023 International Conference on. :25-26 Sep, 2023
Subject
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Temperature dependence
II-VI semiconductor materials
Ionization
Dark current
Numerical simulation
Photodetectors
Charge carrier lifetime
minority carrier lifetime
focal plane arrays
HgCdTe
dark current
diffusion current
incomplete dopants ionization
Language
ISSN
2158-3242
Abstract
In mid- and far-infrared HgCdTe photodetectors, the maximum operating temperature is determined by the dark current, which in turn depends on charge carriers lifetimes. The ability to reduce dark current and operate at the radiative limit allows for significantly higher operating temperature, but in this new scenario some approximations, commonly and historically applied in the literature to estimate and optimize lifetimes and dark current, in some cases should be avoided.