학술논문

Exploring the Design of Energy-Efficient Intermittently Powered Systems Using Reconfigurable Ferroelectric Transistors
Document Type
Periodical
Source
IEEE Transactions on Very Large Scale Integration (VLSI) Systems IEEE Trans. VLSI Syst. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on. 30(4):365-378 Apr, 2022
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Nonvolatile memory
IP networks
Registers
Energy consumption
Transistors
Checkpointing
Microcontrollers
Ferroelectric transistors (FEFETs)
intermittently powered systems (IPSs)
Internet of Things (IoT)
nonvolatile memory (NVM)
Language
ISSN
1063-8210
1557-9999
Abstract
In this article, we explore the design of energy-efficient intermittently powered systems (IPSs) using reconfigurable-ferroelectric transistors (R-FEFETs). Utilizing the dynamic tunability between volatile and nonvolatile modes of operation in R-FEFETs, we design nonvolatile flip-flops (NVFFs) and memory (NVM) suitable for IPS. We present two variants of R-FEFET-based NVFFs (RNVFFs): 1) with automatic backup and 2) with need-based backup. While the former offers high backup energy efficiency, the latter offers low normal operation energy. We also present an IPS-specific R-FEFET-based NVM (3T-R) with high energy efficiency compared with FEFET-based 2T NVM. Leveraging these nonvolatile circuits, we map the microcontroller unit (MCU) core registers of an IPS to RNVFFs and its on-chip memory to 3T-R. Subsequently, we analyze system-level implications of improving NVFFs and NVM individually by using R-FEFETs compared with existing FEFET-based designs. Our system-level simulations demonstrate that although we improve the register energy by 55%–67%, the total memory and system-level energy savings obtained from just improving the NVFFs (registers) in the microcontroller core are only 0.60%–5.78% and 0.31%–3.18%, respectively. However, improving the NVM by using 3T-R results in a much larger total memory and system-level energy savings in the range of 37%–40% and 20%–22%, respectively, in the context of a state-of-the-art IPS.