학술논문
Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor lasers. Design and applications
Document Type
Conference
Author
Source
Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505) Laser and electro-optics Europe Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on. :1 pp. 2000
Subject
Language
Abstract
Summary form only given. We report the demonstration of high output power (>1 W), single frequency and ultra-short pulse operation (50 nm) by simply changing the lasing spot position on the wafer. We also demonstrate, for the first time to our knowledge, high sensitivity Intra-Cavity Laser Absorption Spectroscopy (ICLAS) with a DP-VECSEL. A detection limit lower than 10/sup -10/ per cm of absorption path has been achieved given /spl sim/10/sup -11/ cmHz/sup 1/2/. For this application, the spectro-temporal dynamics of the DP-VECSEL has been studied in the time range from a few microseconds to about one second.