학술논문

Sensitivity analysis of GaN power amplifier model parameters for switching-mode operation
Document Type
Conference
Source
2012 7th European Microwave Integrated Circuit Conference Microwave Integrated Circuits Conference (EuMIC), 2012 7th European. :76-79 Oct, 2012
Subject
Fields, Waves and Electromagnetics
Computing and Processing
Components, Circuits, Devices and Systems
Gallium nitride
Integrated circuit modeling
Power amplifiers
Switches
Capacitance
Microwave amplifiers
Microwave circuits
power amplifiers
semiconductor device modelling
design methodology
Language
Abstract
This paper examines the effect of variations in the extrinsic parameters of GaN PA models due to process variation on the estimation of efficiency and output power. Simple measurement and modelling procedures are proposed in order to allow the full investigation of these effects which are applied to a Class-F design procedure. It was found that device process variations could reduce power amplifier efficiency by around 4% and output power by 1dB.