학술논문
Intersubband and interband optical absorption study of strain-compensated InGaAs-InGaP superlattices grown on GaAs
Document Type
Conference
Source
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :529-532 2002
Subject
Language
ISSN
1092-8669
Abstract
Strain-compensated In/sub 0.32/Ga/sub 0.68/As-In/sub 0.32/Ga/sub 0.68/P superlattices have been grown on semiinsulating [001] GaAs substrates using gas-source molecular-beam epitaxy and their subband structures investigated. Both visible and mid-infrared optical transmission measurements were used to determine the energies of the 1e-2e transitions as a function of superlattice structure. The highest energy 1e-2e transition obtained is 218 meV, corresponding to a wavelength of 5.7 /spl mu/m. The conduction band offset between the strained In/sub 0.32/Ga/sub 0.68/As and In/sub 0.32/Ga/sub 0.68/P appears to lie between 400 and 500 meV.