학술논문

Determination of Intrinsic Spectra from Frontside & Backside Photon Emission Spectroscopy
Document Type
Conference
Source
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Reliability physics symposium, 2007. proceedings. 45th annual. ieee international. :620-621 Apr, 2007
Subject
General Topics for Engineers
Wavelength measurement
MOSFET circuits
Photonic integrated circuits
Microscopy
Dielectric measurements
Silicon
Electrochemical impedance spectroscopy
Thickness measurement
Reflectivity
Failure analysis
Language
ISSN
1541-7026
1938-1891
Abstract
A model to determine the intrinsic spectra from frontside and backside measured spectra is discussed. The model is then used to derive the intrinsic spectra of a saturated nMOSFET from both front side and backside measured spectra. Although the front side and backside measured spectra differs significantly, the intrinsic spectra derived by the model matches well. This method has also been applied to the case of an emission from nMOSFET due to gate leakage