학술논문

Robustness to Device Degradation in Silicon FeFET-based Reservoir Computing (Invited)
Document Type
Conference
Source
2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-6 Apr, 2024
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Degradation
Nonvolatile memory
Reservoirs
Robustness
Silicon
Nonlinear dynamical systems
Electrostatics
Endurance
FeFET
reservoir computing
stable operation
time-series data
Language
ISSN
1938-1891
Abstract
Reservoir computing based on the ferroelectric FET (FeFET) technology offers a computational platform for information processing of time-series data with a low computational cost by leveraging the nonlinear polarization/charge dynamics. While hafnia/Si FeFETs for a memory application encounter critical challenges on the poor endurance caused by polarization-induced interface degradation, the reservoir computing operation of hafnia/Si FeFETs exhibits a high tolerance to the interface degradation particularly when the system is frequently re-trained. The degradation tolerance can be attributed to the polarization dynamics not being canceled out by the trap dynamics in the time domain during operation of reservoir computing. A degradation-robust FeFET reservoir can be trained to classify spoken-digit dataset, where more than 10 4 of bipolar voltage inputs were applied during data processing, with high classification accuracy.