학술논문

Reservoir Computing System With HZO/Si FeFETs in Parallel Configuration: Experimental Demonstration of Speech Classification
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(11):5657-5664 Nov, 2023
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
FeFETs
Reservoirs
Task analysis
Time-frequency analysis
Training
Transistors
Logic gates
Ferroelectric field-effect transistor (FeFET)
Hf₀.₅Zr₀.₅O₂
reservoir computing (RC)
speech classification
Language
ISSN
0018-9383
1557-9646
Abstract
We study a reservoir computing (RC) system with ferroelectric field-effect transistors (FeFETs) in a parallel configuration and develop various schemes in a speech classification task. Experimental drain-source, and substrate output currents of a FeFET are used for temporal reservoir state vectors in response to a time-series input signal at a corresponding frequency channel and their different characteristics accelerate the information extraction capability to effectively enhance the performance. Adjustable weights in the readout part are trained by Ridge regression. Finally, we achieved the highest classification accuracy of 98.1%. Our systematic approaches find important knowledge toward the system design establishment of FeFET-based RC for versatile application.