학술논문
The orientation controlled (Pb,La)(Zr,Ti)O3 capacitor for improved reliabilities
Document Type
Conference
Author
Source
2015 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF), International Symposium on Integrated Functionalities (ISIF), and Piezoelectric Force Microscopy Workshop (PFM) Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the. :226-229 May, 2015
Subject
Language
ISSN
1099-4734
2375-0448
2375-0448
Abstract
We fabricated ferroelectric (Pb,La)(Zr,Ti)O 3 (PLZT) capacitors by pulsed lase deposition (PLD) and investigated the effects of substrate temperature during PLD, Pb contents of the target, annealing temperature and period to improve ferroelectric properties. The R.T. deposition with higher Pb contents in the target (1.27) and subsequent annealing at 750°C for 10 min exhibited the best ferroelectric properties in this work. With higher deposition temperature than R.T. and lower annealing temperature than 700°C, large hysteresis loops were not observed.