학술논문

Hydrogen profile measurement of (Pb,La)(Zr,Ti)O3 capacitor with conductive electrode after hydrogen annealing
Document Type
Conference
Source
2015 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF), International Symposium on Integrated Functionalities (ISIF), and Piezoelectric Force Microscopy Workshop (PFM) Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the. :163-166 May, 2015
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Capacitors
Electrodes
Indium tin oxide
Hydrogen
Nonvolatile memory
Annealing
Random access memory
(Pb,La)(Zr,Ti)O3 thin film
ferroelectric capacitor
non-noble oxide electrode
forming gas annealing
time-of-flight secondary ion mass spectrometry
Language
ISSN
1099-4734
2375-0448
Abstract
We fabricated ferroelectric (Pb,La)(Zr,Ti)O 3 (PLZT) capacitors with Pt, Al:ZnO, or Sn:In 2 O 3 top electrodes. The remnant polarization decreased for these PLZT capacitors after forming gas (3%H 2 /balance N 2 ) annealing at 200°C and 1 Torr, especially for PLZT capacitor with Pt top electrodes due to the catalytic effect of Pt. The time-of-flight secondary ion mass spectrometry depth profile showed that the hydrogen content in PLZT thin films with Pt top electrode increased ca. 2.7 times after forming gas annealing compared with ca. 1.2 times with other electrodes.