학술논문
A trimless, 0.5V–1.0V wide voltage operation, high density SRAM macro utilizing dynamic cell stability monitor and multiple memory cell access
Document Type
Conference
Author
Source
IEEE Asian Solid-State Circuits Conference 2011 Solid State Circuits Conference (A-SSCC), 2011 IEEE Asian. :161-164 Nov, 2011
Subject
Language
Abstract
A low power SRAM operating at the logic supply voltage of 0.5V-1.0V without chip by chip trimming has been developed. A Dynamic Cell Stability Monitor controls wordline level adaptively by sensing the data flip in reference memory cells. The cell failure rate in every process corner is improved. A Modulated Wordline Level Scheme for Replica Cell optimizes sense timing and the operating frequency is improved by 18% at 1.0V. A Multiple Memory Cell Access Mode pushes the minimum operating cell supply voltage down to 0.5V. A 40nm 2Mb SRAM test chip with 0.24um 2 cell has demonstrated 0.5V operation.