학술논문
AlGaAs/InGaAs buried heterostructure laser diodes for pumping solid state lasers
Document Type
Conference
Author
Source
1995 International Semiconductor Conference. CAS '95 Proceedings Semiconductor Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International. :453-456 1995
Subject
Language
Abstract
AlGaAs/InGaAs buried heterostructure laser diodes emitting at 960 nm for pumping solid state lasers have been fabricated and their optical and thermal characteristics have been studied. Cylindrical microlenses were used for obtaining equal divergence angles in both planes, perpendicular and parallel to the active layer plane at 1 W of CW operation optical power. The thermal resistance, active layer and mirror temperatures have been determined as well.