학술논문

1.3 and 1.5 μm wavelength wafer fused InAlGaAs/InP-AlGaAs/GaAs VCSELs with high single mode output power
Document Type
Conference
Source
2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on. :1-1 Jun, 2007
Subject
Photonics and Electrooptics
Components, Circuits, Devices and Systems
Gallium arsenide
Vertical cavity surface emitting lasers
Power generation
Voltage
Wavelength measurement
Heat sinks
Temperature sensors
Chemical lasers
Laser fusion
Laser modes
Language
Abstract
The performance of 1.3 and 1.5 μm emission wavelength VCSELs fabricated by double wafer fusion for communication and chemical sensing applications is reported in this paper. Light-current and voltage-current characteristics of the devices are measured at different heat sink temperatures. Results show high laser performance with record high single mode output power.