학술논문
Fast recovery performance of vertical GaN Schottky barrier diodes on low-dislocation-density GaN substrates
Document Type
Conference
Author
Source
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on. :309-312 Jun, 2014
Subject
Language
ISSN
1063-6854
1946-0201
1946-0201
Abstract
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on free-standing GaN substrates with low dislocation density. Vertical GaN-SBDs with a forward current of 5A and a blocking voltage of 600V exhibit the most superior reverse recovery characteristics among GaN, SiC, and Si diodes. We also confirmed stable forward and reverse aging characteristics for 1000 hours at 150 °C.