학술논문

Low-Capacitance SCR for On-Chip ESD Protection with High CDM Tolerance in 7nm Bulk FinFET Technology
Document Type
Conference
Source
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Symposium (EOS/ESD), 2019 41st Annual EOS/ESD. EOS-41:1-5 Sep, 2019
Subject
Aerospace
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Power, Energy and Industry Applications
Signal Processing and Analysis
Electrostatic discharges
Clamps
Parasitic capacitance
Layout
Robustness
FinFETs
Language
Abstract
A low-capacitance silicon-controlled rectifier for high speed I/O pad protection is implemented with TSMC 7nm bulk FinFET technology. It can achieve much higher ESD robustness per capacitance with better dynamic on-resistance and faster turn-on speed for CDM protection as compared to the prior art.