부산대학교 도서관

We present dielectric barrier booster for remote extension doping in low-dimensional materials (LDMs), e.g., ID Carbon Nanotubes (CNTs) and 2D MoS 2 . In contrast to prior work, the key idea is to "engineer" the thickness of a barrier layer (t BAR ) between LDM and dopant layer, in conjunction with the dopant layer itself, to optimize various remote extension doping trade-offs (e.g., transport, leakage, doping strength, parasitic load). Understanding such trade-offs requires extensive Design-Technology Co-Optimization (DTCO), not explored in prior literature. We explore a large space of ~50,000 design points through DTCO and derive various insights, including: (a) Barrier booster is key to enabling up to 1.5× energy-delay product (EDP) benefits for CNT FET ring oscillators vs. no-barrier case, (b) Barrier booster optimization depends on the target objective function: EDP optimization favors small t BAR (to increase extension charge density) while delay optimization favors large t BAR (to improve transport properties), (c) Doping guidelines derived from DTCO are LDM-specific: for example, we project 1.9× and 4.6× EDP benefits for extension-doped (with barrier booster) CNTs and MoS 2 , respectively, vs. undoped FETs. However, if EDP-optimal parameters for MoS 2 are used for CNTs (or vice-versa), the resulting EDP benefits are