학술논문

Effect of substrate temperature and hydrogen dilution on thin silicon films deposited at low substrate temperatures
Document Type
Conference
Source
3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of Photovoltaic energy conference Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on. 2:1643-1646 Vol.2 2003
Subject
Photonics and Electrooptics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Temperature
Hydrogen
Silicon
Semiconductor films
Crystallization
Amorphous materials
Plastic films
Semiconductor thin films
Photovoltaic cells
Surfaces
Language
Abstract
Amorphous and microcrystalline silicon thin films for solar cells motivated by the usage of plastic substrates have been grown by PECVD with variable dilution at T/sub S/=80/spl deg/C and variable substrate temperature T/sub S/ from 35/spl deg/C to 200/spl deg/C at r/sub H/=133. A complex characterisation including topography pictures and maps of local currents by combined AFM, crystallinity by Raman spectroscopy, conductivity, activation energy, ambipolar diffusion length by SSPG and hydrogen content by ERDA has been performed. The possible misleading results of some methods have been reported as well as the key role of hydrogen at the low temperatures facilitating the crystallite formation.