학술논문
Dynamic characteristics of high voltage 4H-SiC vertical JFETs
Document Type
Conference
Author
Source
11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on. :339-342 1999
Subject
Language
ISSN
1063-6854
Abstract
We have developed a novel structure for a fully implanted, normally-on vertical junction field effect transistor (VJFET) and fabricated prototypes with blocking voltages between 600 and 1000 V. Mounting the SiC VJFET together with a 50 V Si MOSFET on a DCB substrate in a cascode circuit, we obtain a normally-off high voltage switch. The specific on-resistance of the VJFET was sufficiently low, in the range of 18 to 40 m/spl Omega/cm/sup 2/, for various blocking voltages. The dynamic behaviour shows turn-off times between 50 ns and 2 /spl mu/s due to the RC-product of two different p-gate networks.