학술논문
Switching behaviour of fast high voltage SiC pn-diodes
Document Type
Conference
Source
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on. :127-130 1998
Subject
Language
ISSN
1063-6854
Abstract
4H-SiC p-n diodes with an active area of 1 mm/sup 2/ and up to 3 kV blocking voltage have been fabricated, characterized and compared to simulations. The static forward characteristics demonstrate the expected forward power loss with a negative temperature coefficient. The diodes exhibit a stable avalanche breakdown, showing a small positive temperature coefficient (0.3 V/K). The turn-on switching behaviour shows a relatively small voltage overshoot as compared to silicon diodes. The turn-off resembles that of a Schottky diode. In both cases, the dynamics can be attributed to a rapid recombination of the storage charge, even under high forward injection conditions. Numerical simulations may point to a local lifetime reduction at the p-n junction.