학술논문
Stacked high voltage switch based on SiC VJFETs
Document Type
Conference
Source
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. Power semiconductor devices and IC's Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on. :139-142 2003
Subject
Language
Abstract
Based on the serial connection of high voltage SiC VJFETs a stacked solution able to block very high voltages is presented. By connecting VJFETs in series, a unipolar high voltage switch with 8kV blocking voltage and an on-resistance of 2/spl Omega/ was fabricated. The basic functions of this stacked switch are analyzed by discussing the electrical behavior. The static and dynamic behavior indicates an interesting perspective for high voltage and high power applications. Especially the dynamics are carefully analyzed using a low voltage version of the stacked solution. Additionally, the potential of SiC VJFETs as a 4kV single switch is demonstrated.