학술논문

Transimpedance amplifier design and performance for high bit rate optical fiber local loop networks
Document Type
Conference
Source
GaAs IC Symposium Technical Digest 1992 Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE. :41-44 1992
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Bit rate
Gallium arsenide
MMICs
Low-noise amplifiers
Microwave amplifiers
MESFET integrated circuits
Microwave integrated circuits
Monolithic integrated circuits
Integrated circuit technology
Microwave technology
Language
Abstract
A transimpedance amplifier has been designed and fabricated using an established GaAs MMIC (monolithic microwave integrated circuit) technology based on ion-implanted GaAs MESFETs with 0.5- mu m gate length, interdigital and overlay SiN capacitors, via holes, and mesa resistors. The amplifier exhibits a transimpedance gain of 71 dB Omega over the -3-dB bandwidth of DC 2 GHz, a very low equivalent input noise current density of less than 2 pA/ square root Hz, and a DC power consumption of 0.62 W. After a series of design iterations the state-of-the-art amplifier was uniquely unconditionally stable with a large tolerance to external bias conditions.ETX