학술논문

Multi-junction cells with monolithic bypass diodes
Document Type
Conference
Source
3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of Photovoltaic energy conference Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on. 1:626-629 Vol.1 2003
Subject
Photonics and Electrooptics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Schottky diodes
Photovoltaic cells
Electric breakdown
Silicon
Voltage
Leakage current
Protection
Costs
Qualifications
Manufacturing
Language
Abstract
Bypass diodes are attached electrically parallel (but with opposite polarity) to solar cells such that when the cells are reverse biased, the bypass diodes are forward biased, passing current and preventing the cells from going into reverse breakdown. For III-V single and multi-junction space cells, discrete silicon bypass diodes have typically been used. In this paper, we present a monolithic bypass diode, grown on top of the III-V solar cell. The bypass diode is of opposite polarity to the cell, but electrically parallel to the cell. The advantage of the monolithic diode over the discrete diode is the reduction in interconnects and handling required during the interconnecting of cells into strings. We present performance, reliability, and space qualification results for the monolithic bypass diode. Of particular importance are the diode reverse bias leakage current and the forward bias turn-on voltage. Large area (/spl sim/30 cm/sup 2/) cell/monolithic diodes with efficiencies of 28% have been made.