학술논문

Physics of metal silicides: Stability, stoichiometry, and schottky barrier control
Document Type
Conference
Source
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on. :851-854 Nov, 2010
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Computing and Processing
Silicon
Silicides
Nickel
Schottky barriers
Substrates
Strain
Language
Abstract
Using theoretical calculations, we explain why some metal atoms like Ni produce bulk silicides and the others such as Au never produce silicides, why silicides with some stoichiometry are difficult to grow on Si substrate, why Schottky barrier for electrons simply decreases as the Si ratio in silicides increases, and how the dopants change Schottky barrier. It is shown that the keys to answer these questions are (i) the electron transfer from Si-p to metal-atom-d orbitals and (ii) the energy losses by elastic strain and bond-breaking at the interface.