학술논문

H-Band Differential Cascode Power Amplifier Achieving 9.5-dBm OP1dB at 260 GHz in 250-nm InP DHBT Process
Document Type
Conference
Source
2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 Microwave Symposium - IMS 2023, 2023 IEEE/MTT-S International. :1046-1049 Jun, 2023
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Waveguide transitions
Power transmission lines
Power amplifiers
Bandwidth
Transmission line measurements
System-on-chip
III-V semiconductor materials
THz wave
power amplifier
cascode
InP DHBT
on-chip Balun
on-chip transition
Language
ISSN
2576-7216
Abstract
We present a 260-GHz differential cascode power amplifier in the 250-nm InP DHBT process. For the on-wafer measurement or waveguide packaging, on-chip baluns or dipole waveguide transitions were monolithically integrated. From the on-wafer measurement, the peak small signal gain (S21) and 3-dB bandwidth are 19.5 dB at 260 GHz and 25 GHz in the range of 254.2–279.2 GHz, respectively. The maximum output power, OP1dB, and PAEMAX are 10.2 dBm, 9.5 dBm, and 3.1%, respectively, at 260 GHz.