학술논문
Self-consistent simulation of PRAM with comprehensive physical models
Document Type
Conference
Author
Source
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on. :1154-1156 Nov, 2010
Subject
Language
Abstract
A comprehensive simulation of PRAM including the electrical transport, thermal diffusion, phase change dynamics and percolation effect is presented. They are fully coupled to each other in order to reflect the fundamental physical process in the programming operation of PRAM cell. By means of the developed simulation method, both programming operations and impacts of thermal boundary resistance (TBR) are evaluated. The simulation results show that SET time is more sensitive to TBR, which causes a remarkable drift of R-t set characteristic.