학술논문
Thickness measurement of ultra-thin gate dielectrics under inversion condition
Document Type
Conference
Author
Source
2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) VLSI technology, systems, and applications VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on. :212-215 2001
Subject
Language
ISSN
1524-766X
Abstract
Accurate measurement of inversion thickness is essential in ULSI technology for development and control of ultra-thin gate dielectric processes. However, the accuracy of the measurement can be severely affected by the high gate leakage current and series resistance. This paper presents a methodology to reduce the measurement error by optimizing the ac modulation frequency and test device structures.