학술논문
Metamorphic HEMT Technology for Microwave, Millimeter-Wave, and Submillimeter-Wave Applications
Document Type
Conference
Source
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE. :1-4 Oct, 2013
Subject
Language
ISSN
1550-8781
2374-8443
2374-8443
Abstract
This paper reviews recent progress in the development of GaAs Metamorphic HEMT (MHEMT) technology for microwave, millimeter-wave, and submillimeter-wave applications. Short gate-length (50-100 nm) Metamorphic High Electron Mobility Transistors have been optimized for high gain and low noise performance. Efforts to further improve performance, manufacturability, and verify reliability will be reported. We also describe the design and performance of low noise MMIC amplifiers based on this technology.