학술논문
Single electron switching events in nanometer-scale Si MOSFET's
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 32(9):1669-1674 Sep, 1985
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
High-resolution ac measurements of drain conductance at low temperatures have been made on silicon MOSFET's with channels as narrow as 0.1 µm. These devices show discrete switching events in the channel resistance associated with individual electrons being captured and emitted from single interface traps. The voltage and temperature dependence of this switching gives detailed information on the characteristics of the trap and its distance from the interface. This switching is a component of low-frequency noise in MOSFET's and may be an important limit to the performance of small transistors.