부산대학교 도서관

Nanotechnology-enabled novel RF switches have emerged as a promising alternative to MEMS, owing to current technological limitations of the latter. Additionally, recent research endeavors in the telecommunications sector have aimed on the gradual replacement of MEMS with memristive switches harnessing the unique properties of memristors. Such switches have been recently fabricated and characterized, providing optimal behavior under high-frequency stimuli. In this study, a novel double-pole double-throw (DPDT) memristor-based switch is proposed, that can be also utilized as a differential single-pole double-throw (SPDT) switch for use in RF applications. Memristor elements are incorporated into the circuit design, providing a more area-, power-, and cost-efficient approach. The designed circuits utilize a widely employed memristor model and are properly matched for 50Ω loads. The performance of the three circuit variants is evaluated using various key figures of merit, and the selected topology is further assessed under noisy input stimuli. Through this work, we aim to contribute to the ongoing discussion on the application of memristor-based switches in RF circuits, highlighting their potential advantages and addressing the need for more efficient and reliable alternatives.