부산대학교 도서관

In this paper, we have demonstrated the effect of InGaN notch on device reliability, including CV analysis and linearity analysis of an AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor). Especially, Al 2 O 3 dielectric-based dual channel (DH) MOSHEMT has shown tremendous improvement in drive current, linearity, and transconductance behavior because of low leakage and high scalability. In the proposed device structure, better linearity parameters such as higherorder transconductance (g m2 ), and interception points (VIP2) are explored for drain-to-source voltage (V DS ) of 1 V with and without the presence of biomolecules under the gate electrode. All simulation has been carried out on the Sentaurus TCAD simulator. The simulation results clearly predict the reliability of the device for accurate label-free biosensing.