부산대학교 도서관

Silicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the areas of microwave power devices, power electronic switching devices, high temperature analog and digital electronics, non-volatile memories and UV sensors. This paper presents an overview of SiC electronic properties, current status of the bulk and epitaxial material growth, and characteristics of the recently fabricated devices in some of the above device categories. The first application of silicon carbide in high power pulsed amplifiers at UHF and S-Band frequencies is described.