학술논문
Development of a Characterization Tool for Determination of Sheet Resistance at 9 Places of Large Area 156 mm by 156 mm Diffused Silicon Wafer in Less than 5 Seconds and Its Application in Making High Efficiency Silicon Solar Cells
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Conference
Author
Source
2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems (ICPEICES) Power Electronics, Intelligent Control and Energy Systems (ICPEICES), 2018 2nd IEEE International Conference on. :13-16 Oct, 2018
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Abstract
Sheet resistance measurement using 4 probe method is a very well established technique for measuring the sheet resistance of a thin film on a substrate. This technique is widely used to measure the sheet resistance of diffused silicon wafer in solar photovoltaic industry. However with respect to solar cell industry, the drawback associated with this technique is, it measures the sheet resistance of a very small area. For a large area silicon wafer of size 156 mm by 156 mm, a four probe sheet resistance measurement instrument will take several minutes to take readings at several places on the entire area of the wafer. In the present work a solar cell characterization tool is developed for measuring the sheet resistance at 9 places on a diffused silicon wafer using 9 four probe heads mounted on a single plate. The characterization tool developed in the present work can tell the uniformity of diffusion in a diffused silicon wafer within few seconds on the screen of a computer monitor. Continuous data logging helps in characterizing wafers which are >50,000/day in any smallest PV industry.