학술논문
Correlation of wake-up effect in Hf1-xZrxO2 ferroelectrics with antiferroelectric properties
Document Type
Conference
Author
Source
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT), 2022 IEEE 16th International Conference on. :1-3 Oct, 2022
Subject
Language
Abstract
This paper demonstrates a correlation of wake-up effect in Hf 1-x Zr x O 2 ferroelectrics (FEs) with antiferroelectric (AFE) properties by systematically investigating the effect of various parameters on the polarization characteristics of AFE Hf 0.2 Zr 0.8 O 2 films and FE Hf 0.5 Zr 0.5 O 2 ones with electric field cycling. Our results show that the change in both AFE properties of Hf 0.2 Zr 0.8 O 2 film and wake-up effect of Hf 0.5 Zr 0.5 O 2 ferroelectrics are affected by the process parameters in the same way, which is associated with change in the concentration of tetragonal phase. And phase transition from tetragonal to orthorhombic phase may occur during the wake-up of FE Hf 0.5 Zr 0.5 O 2 films.