학술논문

Smoothening of thin film surfaces
Document Type
Conference
Source
Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology Science and technology Science and Technology, 2000. KORUS 2000. Proceedings. The 4th Korea-Russia International Symposium on. 3:209-214 vol. 3 2000
Subject
General Topics for Engineers
Computing and Processing
Transistors
Rough surfaces
Surface roughness
Surface morphology
Surface topography
Atomic layer deposition
Atomic force microscopy
Temperature
Amorphous materials
Dielectric thin films
Language
Abstract
Surface morphologies of thin dielectric films are studied with atomic force microscopy. It is shown that the deposition temperature greatly affects the structure and the surface roughness of the films. Films deposited at room temperature are found to be amorphous and smooth. Films grown at 200/spl deg/C are amorphous, but also contain single inclusions of crystallites. Finally, fine grain films with quasiperiodic wave-like surface topography are grown at 300-500/spl deg/C. The introduction of S and Se atoms is observed to suppress 3D island growth and to decrease the surface roughness of the films. Both root-mean-square roughness and fractal dimension are proposed to characterize film surfaces.