학술논문
Quantitative full 3D blooming analysis on 1.4um BSI CMOS image sensor
Document Type
Conference
Author
Source
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on. :400-403 Sep, 2013
Subject
Language
ISSN
1946-1569
1946-1577
1946-1577
Abstract
3D TCAD analysis of blooming for 1.4 μm CMOS image sensor (CIS) with two-shared pixel structure has been performed. Its blooming behavior has been modeled and clear design guidelines for potential control inside CIS pixels have been obtained.