학술논문

Demonstration of PtMn-based Field-free Switching SOT MRAM
Document Type
Conference
Source
2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers) Magnetic Conference - Short Papers (INTERMAG Short Papers), 2023 IEEE International. :1-2 May, 2023
Subject
Fields, Waves and Electromagnetics
Couplings
Degradation
Annealing
Critical current density (superconductivity)
Magnetic devices
Switches
Crystallization
Antiferromagnetic materials
Magnetic memory
Spintronics
Thermal stability
Language
Abstract
In the group of Mn-based antiferromagnetic materials, PtMn shows high enough thermal stability to fit the requirement of high temperature in BEOL. We worked on a field-free switching device with the application of PtMn, which can be integrated into perpendicular MRAM stacks and processes of BEOL. With help from ferromagnetic coupling from SAF which is pinned by PtMn, we can get field-free switching, which can further increase the pillar size compared with traditional stray-field MRAM.