학술논문
Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding
Document Type
Conference
Author
Source
2009 Symposium on VLSI Technology VLSI Technology, 2009 Symposium on. :170-171 Jun, 2009
Subject
Language
ISSN
0743-1562
2158-9682
2158-9682
Abstract
A reliability evaluation of a 300-mm-compatible 3DI process is presented. The structure has tungsten through-Si-vias (TSVs), a hybrid Cu/adhesive bonding interface, and a post Si-thinning Cu BEOL. The interface bonding strength, deep thermal cycles test, temperature and humidity test, and ambient permeation oxidation all show favorable results, indicating the suitability of this technology for VLSI applications.