학술논문

Electronic and hole mobilities in wide band-gap monolayer tungsten carbide
Document Type
Conference
Source
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024
Subject
Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Couplings
Correlation
Photonic band gap
Two-dimensional displays
Perturbation methods
Tungsten
Scattering
electron-phonon
2D materials
mobility
self-energies
Language
Abstract
Using a rigorous ab-initio many body perturbation theory, we demonstrate here that a novel tungsten carbide (WC) in its two-dimensional (2D) hexagonal (h) structure posses a strong electron-phonon correlation. 2D h-WC is an indirect semiconductor and has a large band-gap ($\sim$ 1.10 eV) and spin-orbit splitting. We show that due to this strong interaction, a significant self-energy correction appears at various cryogenic and room temperatures. This leads to a strong intra- and interband scattering rates suppressing the electronic and hole mobility around 56 and $9 \mathrm{~cm}^{2} \mathrm{~V}^{-1} \mathrm{~s}^{-1}$ at room temperature.