학술논문
Electronic and hole mobilities in wide band-gap monolayer tungsten carbide
Document Type
Conference
Source
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024
Subject
Language
Abstract
Using a rigorous ab-initio many body perturbation theory, we demonstrate here that a novel tungsten carbide (WC) in its two-dimensional (2D) hexagonal (h) structure posses a strong electron-phonon correlation. 2D h-WC is an indirect semiconductor and has a large band-gap ($\sim$ 1.10 eV) and spin-orbit splitting. We show that due to this strong interaction, a significant self-energy correction appears at various cryogenic and room temperatures. This leads to a strong intra- and interband scattering rates suppressing the electronic and hole mobility around 56 and $9 \mathrm{~cm}^{2} \mathrm{~V}^{-1} \mathrm{~s}^{-1}$ at room temperature.