학술논문
Sub-10-nm Tunnel Field-Effect Transistor with Schottky Drain
Document Type
Conference
Author
Source
2023 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) Electrical, Electronics and Computer Science (SCEECS), 2023 IEEE International Students' Conference on. :1-3 Feb, 2023
Subject
Language
ISSN
2688-0288
Abstract
An SD-TFET, which is a tunnel field effect transistor with Schottky drain, is proposed in this paper for sub-10-nm applications. On-off switching characteristics were examined by examining some of the critical device parameters, including the metal work-function in a Schottky drain. When designing SD- TFETs for low-power integrated circuits, a moderate Schottky drain work-function is preferred.