학술논문
Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25µm Power pHEMT technology
Document Type
Conference
Author
Source
2009 European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European. :308-311 Sep, 2009
Subject
Language
Abstract
In the frame of radar and warfare applications, a Monolithic Microwave Integrated Circuit (MMIC) Mixer has been developed using a UMS GaAs 0.25 µm Power pHEMT Technology. The mixer presented in this document exhibits at the same time wide frequency band, high isolation and high linearity. In the 6–18GHz frequency band, the mixer demonstrates 25dB for the isolations, an input RF compression point higher than 16dBm and an Input IP3 of 25dBm. To our knowledge these performances are among the highest reported on a fully integrated GaAs MMIC.