학술논문

Practical implementation of an interleaved boost converter using SiC diodes for PV applications
Document Type
Conference
Source
8th International Conference on Power Electronics - ECCE Asia Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on. :372-379 May, 2011
Subject
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Inductors
Silicon carbide
Schottky diodes
Switches
Inverters
Core loss
Power semiconductor
SiC
diode
MOSFET
interleaved boost converter
PV
Language
ISSN
2150-6078
2150-6086
Abstract
The implementation of an interleaved boost converter using SiC diodes for PV applications is presented in this paper. The converter consists of two switching cells sharing the PV panel output current. Their switching patterns are synchronized with 180 degree phase shift. Each switching cell has a SiC Schottky diode and a CoolMOS switching device. The SiC diodes provide zero reverse recovery current ideally, which reduces the commutation losses of the switches. Such advantage from the SiC diodes can make the converter system achieve higher efficiency and higher power density by reducing the requirement of the cooling system. This paper presents also an optimization study of the size and efficiency of the interleaved boost converter. Based on 1) the steady-state characteristic of the topology, 2) the static and dynamic characteristics of the switching cells, 3) the loss model of the magnetic components and 4) the cooling system design, the paper provides a set of design criteria, procedures and experimental results for a 2.5 kW interleaved boost converter using SiC diodes prototype.