학술논문
Fast Switching of STT-MRAM to Realize High Speed Applications
Document Type
Conference
Author
Lee, T. Y.; Yamane, K.; Kwon, J.; Naik, V. B.; Otani, Y.; Zeng, D.; Lim, J. H.; Sivabalan, K.; Chiang, C.; Huang, Y.; Jang, S. H.; Hau, L. Y.; Chao, R.; Chung, N. L.; Neo, W. P.; Khua, K.; Thiyagarajah, N.; Ling, T.; Goh, L. C.; Hwang, J.; Zhang, L.; Low, R.; Balasankaran, N.; Tan, F.; Wong, J.; Seet, C. S.; Ting, J. W.; Ong, S.; You, Y. S.; Woo, S. T.; Siah, S. Y.
Source
2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020
Subject
Language
ISSN
2158-9682
Abstract
We demonstrate less than 10 ns write speed and read access for 40Mb embedded MRAM (eMRAM) macro covering high temperature up to 125°C. The macro shows un-powered data retention of 10 second at 125°C and the capability of achieving 1012 cycles endurance and 5 ns read time. Our study indicates that MTJ stack engineering and MTJ CD optimization are the two critical factors to achieve the suppression of bit error rate (BER) ballooning and 0.5× Ic scaling for fast switching.