학술논문
22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-l MCU Applications
Document Type
Conference
Author
Lee, K.; Chao, R.; Yamane, K.; Naik, V. B.; Yang, H.; Kwon, J.; Chung, N. L.; Jang, S. H.; Behin-Aein, B.; Lim, J.H.; K, S.; Liu, B.; Toh, E. H.; Gan, K. W.; Zeng, D.; Thiyagarajah, N.; Goh, L. C.; Ling, T.; Ting, J. W.; Hwang, J.; Zhang, L.; Low, R.; Krishnan, R.; Tan, S. L; You, Y. S.; Seet, C. S.; Cong, H.; Wong, J.; Woo, S. T.; Quek, E.; Siah, S. Y.
Source
2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :27.1.1-27.1.4 Dec, 2018
Subject
Language
ISSN
2156-017X
Abstract
We demonstrate 22-nm FD-SOI 40Mb embedded MRAM (eMRAM) macros for automotive-grade-l (Auto-G1) MCU applications, highlighting sub-ppm to bit error rate and zero failure after 1M endurance cycles across Auto-G1 operating temperature range (-40∼150 °C). Read disturbance characterization with external field also reveals that 40Mb eMRAM macro is capable of active-mode magnetic immunity > 500 Oe at 150 °C. In addition, based on 22-nm eMRAM macro data, we review the effects of magnetic tunnel junction (MTJ) size on reliability and examine scalability of eMRAM technology beyond 22 nm.