학술논문
Four-Point Bending Methodology development for 40nm technology Cu/Nblk interface adhesion measurement
Document Type
Conference
Author
Source
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the. :469-471 Jun, 2015
Subject
Language
ISSN
1946-1542
1946-1550
1946-1550
Abstract
A sample preparation methodology was developed for Four-Point Bending test (4PB) of Cu/Nblk (Nitrogen-doped Barrier for Low-k, SiCN) bi-material in order to overcome interfacial delamination zero yielding issue, possibly caused by the change in carbon content of Nblk film. The methodology involving (i) chemical de-processing (HNO 3 :BOE mixture) and (ii) film thickness optimization was instrumental in achieving greater than 50% delamination yield.