학술논문
The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS2 based MOSFET
Document Type
Conference
Source
2021 International Conference on Information Science and Communications Technologies (ICISCT) Information Science and Communications Technologies (ICISCT), 2021 International Conference on. :01-03 Nov, 2021
Subject
Language
Abstract
In the paper the self-heating effect in a nanoscale planar MOSFET with a two-dimensional MoS 2 channel is investigated by simulations. The self-heating effect is simulated by using the thermodynamic transport model. Contribution of gate voltage and drain voltages to SHE, particularly to the temperature distribution along the center of channel is considered. It is shown that the temperature distribution along the channel and the temperature at the channel center considerably depend on the gate and drain voltages. The details of this influences is analysed.