학술논문
The prospects of two-dimensional materials for ultimately scaled CMOS
Document Type
Conference
Author
Source
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on. :113-116 Apr, 2017
Subject
Language
ISSN
2472-9132
Abstract
Over decades, MOSFET gate length scaling has been the main source of progress in semiconductor electronics. Today, however, the motivation of the industry to continue gate length scaling is declining. On the other hand, researchers still spend considerable efforts on reducing the gate length and on developing ultimately scaled MOSFETs. To this end, both new device architectures and alternative channel materials are explored. In the present paper, the future of CMOS scaling in the light of emerging 2D channel materials is discussed.