부산대학교 도서관

This paper reports on the design and fabrication of enhancement-mode high-electron mobility transistors (HEMTs) in AlGaN/GaN FinFET technology with 100 nm of gate length (L g = 100 nm). Provided by the lateral as well as the vertical modulation of the fin-shaped channels, the threshold voltages of the designed transistors are made possible to be shifted toward the positive direction, enabling the enhancement-mode (E-mode) of operation. The fabricated FinFETs also exhibit highly-improved off-state performance with minimised short-channel effects (SCE) as a result of the enhanced gate control. A very high on/off current ratio of 10 8 and a sub-threshold swing of 75 mV/decade are recorded by the E-mode devices with a threshold voltage of +0.2 V, showing substantial potential for high speed logic, mixed-signal and power electronics applications.