학술논문

Long throw and i-PVD liners for W-plug contact and via applications
Document Type
Conference
Source
2001 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (IEEE Cat. No.01CH37160) Advanced semiconductor manufacturing Advanced Semiconductor Manufacturing Conference, 2001 IEEE/SEMI. :97-100 2001
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Atherosclerosis
Tin
Manufacturing processes
Contact resistance
Integrated circuit interconnections
Random access memory
Particle production
Collimators
Costs
Substrates
Language
ISSN
1078-8743
Abstract
Results are presented for long throw and ionized PVD layers for W-plug liner applications. 245 mm and 430 mm long throw modules are discussed, the latter being shown to be applicable to sub-0.17 /spl mu/m contacts when combined with very low process pressures. Data is presented showing that stable contacts can be produced without the damage risks associated with high energy ionized PVD processes. For metal applications above contact, a novel PVD module is shown to have particular benefits at via level. Chain data is presented showing >15% reduction in via resistance compared to any combination of i-PVD/long throw Ti/TiN sequences.